? 2017 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 250 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 250 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c 146 a i dm t c = 25 ? c, pulse width limited by t jm 400 a i a t c = 25 ? c85a e as t c = 25 ? c 2.3 j p d t c = 25 ? c 390 w dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 20 v/ns t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol ? 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in terminal connection torque 1.3/11.5 nm/lb.in weight 30 g symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 250 v v gs(th) v ds = v gs , i d = 4ma 2.5 4.5 v i gss v gs = ? 20v, v ds = 0v ???????????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 1 ma r ds(on) v gs = 10v, i d = 85a, note 1 6.1 7.4 m ? IXFN170N25X3 v dss = 250v i d25 = 146a r ds(on) ? ? ? ? ? 7.4m ? ? ? ? ? ds100825a(4/17) n-channel enhancement mode avalanche rated fast intrinsic diode x3-class hiperfet tm power mosfet features ? international standard package ? minibloc, with aluminium nitride isolation ? isolation voltage 2500 v~ ? high current handling capability ? fast intrinsic diode ? avalanche rated ? low r ds(on) advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode ??? power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls minibloc, sot-227 ??????????? ??????????? ??????????? ??????????? ??????????? e153432 g d s s g = gate d = drain s = source s s d g advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFN170N25X3 note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 170 a i sm repetitive, pulse width limited by t jm 680 a v sd i f = 100a, v gs = 0v, note 1 1.4 v t rr 135 ns q rm 980 ? nc i rm 13 a i f = 85a, -di/dt = 100a/ ? s v r = 100v, v gs = 0v sot-227b (ixfn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 60a, note 1 66 110 s r gi gate input resistance 1.3 ? c iss 13.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2.3 nf c rss 1.6 pf c o(er) 800 pf c o(tr) 3280 pf t d(on) 18 ns t r 10 ns t d(off) 62 ns t f 7 ns q g(on) 190 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 85a 55 nc q gd 45 nc r thjc 0.32 ? c/w r thcs 0.05 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 85a r g = 5 ?? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2017 ixys corporation, all rights reserved IXFN170N25X3 fig. 1. output characteristics @ t j = 25 o c 0 20 40 60 80 100 120 140 160 180 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v 4v fig. 3. output characteristics @ t j = 125 o c 0 20 40 60 80 100 120 140 160 180 00.511.522.53 v ds - volts i d - amperes v gs = 10v 8v 4v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 85a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 170a i d = 85a fig. 5. r ds(on) normalized to i d = 85a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 700 800 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 2. extended output characteristics @ t j = 25 o c 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 6v 8v 7v 9v 5v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th) bv dss
ixys reserves the right to change limits, test conditions, and dimensions. IXFN170N25X3 fig. 7. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 40 80 120 160 200 240 0 40 80 120 160 200 240 i d - amperes g f s - siemens 25 o c 125 o c t j = - 40 o c fig. 10. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd - volts i s - amperes t j = 25 o c t j = 125 o c fig. 11. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 125v i d = 85a i g = 10ma fig. 12. capacitance 1 10 100 1,000 10,000 100,000 1 10 100 1,000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 8. input admittance 0 50 100 150 200 250 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c
? 2017 ixys corporation, all rights reserved IXFN170N25X3 ixys ref: f_170n25x3(28-s301) 4-24-17 fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 14. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 25 o c sin g le pulse 1ms 100 s r ds( on ) limit 10ms dc 25 s fig. 13. output capacitance stored energy 0 4 8 12 16 20 24 0 40 80 120 160 200 240 v ds - volts e oss - microjoules
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